Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTK3043NT1G

NTK3043NT1G

NTK3043NT1G

ON Semiconductor

NTK3043NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTK3043NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SOT-723
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.4Ohm
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating225mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Power Dissipation-Max 310mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation440mW
Turn On Delay Time13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4 Ω @ 10mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V
Current - Continuous Drain (Id) @ 25°C 210mA Ta
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 1.65V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 285mA
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.255A
Drain to Source Breakdown Voltage 20V
Height 550μm
Length 1.25mm
Width 850μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18445 items

Pricing & Ordering

QuantityUnit PriceExt. Price

NTK3043NT1G Product Details

NTK3043NT1G Description


These N-Channel enhancement mode power field effect transistors are made using Fairchild's proprietary planar stripe DMOS technology. This unique technology has been specially optimized to minimize on-state resistance, increase switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are suited for high-efficiency switching DC/DC converters and switch mode power supply.



NTK3043NT1G Features


? Allows for the production of high-density PCBs


? Footprint is 44 percent smaller and 38 percent thinner than SC89.


? This device's low voltage drive makes it ideal for portable equipment.


? VGS(TH) 1.3 V, Low Threshold Levels


? Its modest profile (0.5 mm) enables it to easily fit into ultra-thin environments like portable electronics.


? Logic Level Gate Drive was used, allowing for future migration to lower levels using the same basic topology.


? These devices are free of lead and halogens.



NTK3043NT1G Applications


? Switching, Interfacing


? Switching at a High Rate


? Cellphones and PDAs


Get Subscriber

Enter Your Email Address, Get the Latest News