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BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1

Infineon Technologies

BSZ110N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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BSZ110N08NS5ATMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 22μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 40V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Rise Time3ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage80V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 40 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:5507 items

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BSZ110N08NS5ATMA1 Product Details

BSZ110N08NS5ATMA1 Description


BSZ110N08NS5ATMA1 is an 80v OptiMOS? 5 power MOSFET especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the Infineon BSZ110N08NS5ATMA1 can also be utilized in other industrial applications such as solar, low voltage drives, and adapter. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSZ110N08NS5ATMA1 is in the TSDSON-8 package with 50W power dissipation.



BSZ110N08NS5ATMA1 Features


  • Optimized for synchronous rectification

  • Ideal for high switching frequency

  • Output capacitance reduction of up to 44 %

  • RDS(on) reduction of up to 43 % from the previous generation



BSZ110N08NS5ATMA1 Applications


  • Telecom

  • Server

  • Solar

  • Low voltage drives

  • Adapter


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