Name: NTJD4001NT1G
Brand: ON Semiconductor
SKU: NTJD4001NT1G
Price: 0.45000 USD
Availability: InStock

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NTJD4001NT1G

Manufacturer part number:NTJD4001NT1G

Manufacturer:ON Semiconductor

Description:NTJD4001NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD4001NT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 22 hours ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	272mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	250mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	272mW
Turn On Delay Time	17 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 5V
Rise Time	23ns
Fall Time (Typ)	23 ns
Turn-Off Delay Time	94 ns
Continuous Drain Current (ID)	250mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Nominal Vgs	1.2 V
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTJD4001NT1G Product Details

NTJD4001NT1G Description

NTJD4001NT1G MOSFET can be described as a very high voltage MOSFET that is based on planar stripe technology and DMOS technology. MOSFET NTJD4001NT1G is designed to decrease the resistance to on-state. NTJD4001NT1G ON Semiconductor is ideal for Low Side Load Switch, Li-Ion Battery Supplied Devices, Buck Converters, and Level Shifts.