Name: SI7913DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7913DN-T1-E3
Price: 1.72000 USD
Availability: InStock

new-10%

SI7913DN-T1-E3

Manufacturer part number:SI7913DN-T1-E3

Manufacturer:Vishay Siliconix

Description:Dual P-Channel 20 V 0.037 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8

Case Package:SOT-23

Datasheet:SI7913DN-T1-E3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	37mOhm
Subcategory	Other Transistors
Max Power Dissipation	1.3W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SI7913
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 7.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	5A
Gate Charge (Qg) (Max) @ Vgs	24nC @ 4.5V
Rise Time	70ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	-7.4A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SI7913DN-T1-E3

The SI7913DN-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Dual P-Channel 20 V 0.037 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7913DN-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.