Description
The NTHL080N120SC1 is a MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A. In comparison to Silicon, Silicon Carbide (SiC) MOSFETs use a brand-new technology that offers superior switching performance and greater dependability. Low capacitance and gate charge are also made possible by the small chip size and low ON resistance. The maximum efficiency, quicker operating frequency, increased power density, decreased EMI and decreased system size are consequently system benefits.
Features
Low Effective Output Capacitance (typ. Coss= 80 pF)
100% UIL Tested
Typ. RDS(on)= 80 mΩ
Ultra Low Gate Charge (typ. QG(tot)= 56 nC)
1200 V @ TJ= 150°C
Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A
High Speed Switching with Low Capacitance
These Devices are Pb?Free and are RoHS Compliant
Applications
UPS
DC/DC Converter
Boost Inverter
Industrial Motor Drive
PV Charger
