Name: ZXMN6A09KTC
Brand: Diodes Incorporated
SKU: ZXMN6A09KTC
Availability: InStock

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ZXMN6A09KTC

Manufacturer part number:ZXMN6A09KTC

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 11.2A DPAK

Case Package:SOT-23

Datasheet:ZXMN6A09KTC Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Powers
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	11.2A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.15W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	10.1W
Case Connection	DRAIN
Turn On Delay Time	4.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1426pF @ 30V
Current - Continuous Drain (Id) @ 25°C	7.7A Ta
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	4.6ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14.5 ns
Turn-Off Delay Time	32.5 ns
Continuous Drain Current (ID)	11.8A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.9A
Drain to Source Breakdown Voltage	60V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About ZXMN6A09KTC

The ZXMN6A09KTC from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 11.2A DPAK.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the ZXMN6A09KTC, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.