Name: NTGS3441T1G
Brand: ON Semiconductor
SKU: NTGS3441T1G
Price: 0.49000 USD
Availability: InStock

new-10%

NTGS3441T1G

Manufacturer part number:NTGS3441T1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 90m Ω @ 3.3A, 4.5V ±8V 480pF @ 5V 14nC @ 4.5V 20V SOT-23-6

Case Package:SOT-23

Datasheet:NTGS3441T1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	90MOhm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-1A
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 5V
Current - Continuous Drain (Id) @ 25°C	1.65A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	23.5ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	2.35A
Threshold Voltage	-1.05V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Nominal Vgs	-1.05 V
Height	1mm
Length	3.1mm
Width	1.7mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTGS3441T1G Product Details

NTGS3441T1G Description

NTGS3441T1G P-channel MOSFET is based on an original, unique vertical structure. NTGS3441T1G MOSFET results in a dramatic reduction in the on-resistance. NTGS3441T1G ON Semiconductor is utilized in the switching power applications such as Cellular and Cordless Telephones, Power Management in Portable Products, Power Management in Battery-Powered Products, PCMCIA Cards.