STG3P2M10N60B Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of given drive voltage ratings (4.5V - 25V).
STG3P2M10N60B Features
-5.3A,-30V Ros(owy= 50 mQ @Vas=-10 V
Rosqon)= 80 m0 @ Vos=-4.5 V
Low gate charge
Fast switching speed
High-performance trench technology for extremely
low RoSIoM)
High power and current handling capability
STG3P2M10N60B Applications
Power management
Load switch
Battery protection
