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NTD4302-1G

NTD4302-1G

NTD4302-1G

ON Semiconductor

MOSFET N-CH 30V 8.4A IPAK

SOT-23

NTD4302-1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating68A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.04W Ta 75W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation75W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V
Current - Continuous Drain (Id) @ 25°C 8.4A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 68A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 722 mJ
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:29778 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.068763$0.068763
500$0.050561$25.2805
1000$0.042134$42.134
2000$0.038655$77.31
5000$0.036127$180.635
10000$0.033606$336.06
15000$0.032501$487.515
50000$0.031958$1597.9

About NTD4302-1G

The NTD4302-1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 8.4A IPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTD4302-1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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