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FDMC86248

FDMC86248

FDMC86248

ON Semiconductor

FDMC86248 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC86248 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 36W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.3W
Case Connection DRAIN
Turn On Delay Time6.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 525pF @ 75V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time1.4ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3.4A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.09Ohm
Avalanche Energy Rating (Eas) 37 mJ
Nominal Vgs 3.2 V
Height 1.05mm
Length 3.3mm
Width 3.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:6328 items

Pricing & Ordering

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FDMC86248 Product Details

FDMC86248 Description


FDMC86248 is a type of N-channel MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process to provide lower on-state resistance and superior switching performance. Lower RDS (on) and high efficiency can be provided based on advanced package and silicon combination. As a result, it is well suited for primary MOSFET and MV synchronous rectifiers.



FDMC86248 Features


  • Lower RDS (on)

  • Lower on-state resistance

  • High dv/dt capability

  • Superior switching performance

  • Available in the Power33 package



FDMC86248 Applications


  • Primary MOSFET

  • MV synchronous rectifier


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