FDMC86248 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMC86248 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
32.13mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 36W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
6.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds
525pF @ 75V
Current - Continuous Drain (Id) @ 25°C
3.4A Ta
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Rise Time
1.4ns
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.8 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
3.4A
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.09Ohm
Avalanche Energy Rating (Eas)
37 mJ
Nominal Vgs
3.2 V
Height
1.05mm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
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FDMC86248 Product Details
FDMC86248 Description
FDMC86248 is a type of N-channel MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process to provide lower on-state resistance and superior switching performance. Lower RDS (on) and high efficiency can be provided based on advanced package and silicon combination. As a result, it is well suited for primary MOSFET and MV synchronous rectifiers.
FDMC86248 Features
Lower RDS (on)
Lower on-state resistance
High dv/dt capability
Superior switching performance
Available in the Power33 package
FDMC86248 Applications
Primary MOSFET
MV synchronous rectifier
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