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NTD3055L170G

NTD3055L170G

NTD3055L170G

ON Semiconductor

NTD3055L170G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD3055L170G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 12 hours ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating9A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 28.5W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation28.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time69ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 27A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2037 items

NTD3055L170G Product Details

NTD3055L170G Description


NTD3055L170G is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. NTD3055L170G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD3055L170G is -55°C~175°C TJ and its maximum power dissipation is 28.5W.



NTD3055L170G Features


  • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • These are Pb?Free Devices



NTD3055L170G Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


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