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IRF6607

IRF6607

IRF6607

Infineon Technologies

IRF6607 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF6607 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MT
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.6W Ta 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6930pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 94A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 7V
Vgs (Max) ±12V
RoHS StatusNon-RoHS Compliant
In-Stock:3928 items

IRF6607 Product Details

IRF6607 Description


The IRF6607 is an application Specific MOSFET combining the most recent HEXFET? Power MOSFET Silicon technology with sophisticated DirectFETTM packaging to produce the lowest on-state resistance in a SO-8 footprint and 0.7 mm profile. The DirectFET package is backwards compatible with existing power application layout geometries, PCB assembly equipment, and vapour phase, infrared, or convection soldering processes.



IRF6607 Features


  • Low Conduction Losses

  • High Cdv/dt Immunity

  • Low Profile (<0.7 mm)

  • Dual-Sided Cooling Compatible

  • Compatible with existing Surface Mount Techniques



IRF6607 Applications


  • CPU Core DC-DC Converters



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