NTD25P03LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD25P03LT4G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
51MOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-25A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
75W Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
75W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 25A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C
25A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
37ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4V 5V
Vgs (Max)
±15V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
25A
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
75A
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
-1.6 V
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:7267 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.17000
$1.17
500
$1.1583
$579.15
1000
$1.1466
$1146.6
1500
$1.1349
$1702.35
2000
$1.1232
$2246.4
2500
$1.1115
$2778.75
NTD25P03LT4G Product Details
NTD25P03LT4G Description
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high-speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD25P03LT4G is in the TO-252-4 package with 75W power dissipation.
NTD25P03LT4G Features
AEC?Q101 Qualified and PPAP Capable
Pb?Free and RoHS Compliant
Drain?to?Source Voltage: -30v
Total Power Dissipation @ TA= 25°C: 75w
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
NTD25P03LT4G Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
Motor Drive & Control
Power Management
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