NTMFS4108NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTMFS4108NT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
22A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.1W Ta 96.2W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.4W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.2m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6000pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.5A Ta
Gate Charge (Qg) (Max) @ Vgs
54nC @ 4.5V
Rise Time
60ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
140 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
35A
Gate to Source Voltage (Vgs)
12V
Drain-source On Resistance-Max
0.0022Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
203A
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:14347 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.066091
$3.066091
10
$2.892538
$28.92538
100
$2.728810
$272.881
500
$2.574349
$1287.1745
1000
$2.428632
$2428.632
NTMFS4108NT1G Product Details
NTMFS4108NT1G Description
NTMFS4108NT1G is an N-channel Power MO0SFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. The operating temperature of the NTMFS4108NT1G is -55°C~150°C TJ and its maximum power dissipation is 2.4W. NTMFS4108NT1G has 5 pins and it is available in Tape & Reel (TR) packaging way. The Fall Time (Typ) of NTMFS4108NT1G is 140 ns and its Turn-Off Delay Time is 70 ns.
NTMFS4108NT1G Features
Thermally and Electrically Enhanced Packaging Compatible with Standard SO?8 Package Footprint
New Package Provides Capability of Inspection and Probe After Board Mounting
