NTD14N03R datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD14N03R Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
14A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
1.04W Ta 20.8W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.56W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
95m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
115pF @ 20V
Current - Continuous Drain (Id) @ 25°C
2.5A Ta
Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 5V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
9.6 ns
Continuous Drain Current (ID)
2.5A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
11.4A
Drain-source On Resistance-Max
0.13Ohm
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
28A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:4093 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.080053
$1.080053
10
$1.018919
$10.18919
100
$0.961244
$96.1244
500
$0.906834
$453.417
1000
$0.855503
$855.503
NTD14N03R Product Details
NTD14N03R Description
NTD14N03R is a 25v N-channel power MOSFET. The onemi MOSFET is optimized for High Side Switching Requirements in High?Efficiency DC?DC Converters. The operating junction and storage temperature are between -55 and 150℃. The MOSFET NTD14N03R is in the TO-252-3 package with 1.56W power dissipation.
NTD14N03R Features
Planar HD3e Process for Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Los Ciss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters
RoHS Compliant
NTD14N03R Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
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