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PHU101NQ03LT,127

PHU101NQ03LT,127

PHU101NQ03LT,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 25A, 10V ±20V 2180pF @ 25V 23nC @ 5V 30V TO-251-3 Short Leads, IPak, TO-251AA

SOT-23

PHU101NQ03LT,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 166W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 185 mJ
RoHS StatusROHS3 Compliant
In-Stock:2238 items

PHU101NQ03LT,127 Product Details

PHU101NQ03LT,127 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 185 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2180pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 240A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

PHU101NQ03LT,127 Features


the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)


PHU101NQ03LT,127 Applications


There are a lot of NXP USA Inc.
PHU101NQ03LT,127 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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