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NTB60N06LT4

NTB60N06LT4

NTB60N06LT4

ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

SOT-23

NTB60N06LT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating60A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 2.4W Ta 150W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 30A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3075pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Rise Time576ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 237 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 454 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2612 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.976589$5.976589
10$5.638291$56.38291
100$5.319142$531.9142
500$5.018059$2509.0295
1000$4.734018$4734.018

About NTB60N06LT4

The NTB60N06LT4 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 60A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTB60N06LT4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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