FQPF2N60 Description
The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these devices.
FQPF2N60 Features
? 1.6A, 600V, @VGS = 10 V, RDS(on) = 4.7
? Minimal gate fee ( typical 9.0 nC)
? Low Crash ( typical 5.0 pF)
? Quick switch
? Complete avalanche testing
? Better dv/dt capabilities
FQPF2N60 Applications
Switching applications
