Name: STW21NM50N
Brand: STMicroelectronics
SKU: STW21NM50N
Availability: InStock

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STW21NM50N

Manufacturer part number:STW21NM50N

Manufacturer:STMicroelectronics

Description:STW21NM50N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW21NM50N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Base Part Number	STW21N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	72A
Avalanche Energy Rating (Eas)	480 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW21NM50N Product Details

STW21NM50N Description

STW21NM50N is a 500v N-channel Second generation MDmesh? Power MOSFET. The STMicroelectronics STW21NM50N is realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.