NIF9N05CLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NIF9N05CLT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
CONSULT SALES OFFICE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
107MOhm
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
52V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2.6A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max
1.69W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.69W
Case Connection
DRAIN
Clamping Voltage
52V
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
125m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 35V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
7nC @ 4.5V
Rise Time
290ns
Drain to Source Voltage (Vdss)
59V
Drive Voltage (Max Rds On,Min Rds On)
3V 10V
Vgs (Max)
±15V
Fall Time (Typ)
290 ns
Turn-Off Delay Time
1.54 μs
Continuous Drain Current (ID)
2.6A
Threshold Voltage
1.75V
Gate to Source Voltage (Vgs)
15V
Drain to Source Breakdown Voltage
52V
Dual Supply Voltage
52V
Nominal Vgs
1.75 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2621 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.295168
$0.295168
10
$0.278461
$2.78461
100
$0.262699
$26.2699
500
$0.247829
$123.9145
1000
$0.233801
$233.801
NIF9N05CLT1G Product Details
NIF9N05CLT1G Description
NIF9N05CLT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 59V. The operating temperature of the NIF9N05CLT1G is -55°C~150°C TJ and its maximum power dissipation is 1.69W. NIF9N05CLT1G has 4 pins and it is available in Tape & Reel (TR) packaging way. The Turn-Off Delay Time of the NIF9N05CLT1G is 1.54 μs.
NIF9N05CLT1G Features
Diode Clamp Between Gate and Source
ESD Protection ? HBM 5000 V
Active Over?Voltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
Pb?Free Packages are Available
NIF9N05CLT1G Applications
Solenoid Drivers
Lamp Drivers
Small Motor Drivers
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