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NTB125N02R

NTB125N02R

NTB125N02R

ON Semiconductor

NTB125N02R datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTB125N02R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating125A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.98W Ta 113.6W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.72W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C 95A Ta 120.5A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time39ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 120.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 95A
Drain-source On Resistance-Max 0.0062Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 120 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4581 items

NTB125N02R Product Details

NTB125N02R Description


NTB125N02R, manufactured by On Semiconductor. Its category belongs to Electronic Components ICs. It is applied to many fields, like Communications equipment Datacom modules Industrial Grid infrastructure Enterprise systems Datacenter & enterprise computing . And the main parameters of this part is MOSFETs- Power and Small Signal 24V 125A N-channel No-Cancel/No-Return. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



NTB125N02R Features


  • Pb?Free Packages are Available

  • Low Ciss to Minimize Driver Loss

  • Planar HD3e Process for Fast Switching Performance

  • Optimized Qgd and RDS(on) for Shoot?through Protection

  • Body Diode for Low trr and Qrr and Optimized for SynchronousOperation



NTB125N02R Applications


  • Industrial

  • Enterprise systems

  • Communications equipment


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