NGTD17T65F2WP Description
NGTD17T65F2WP is a 650V insulated gate bipolar transistor(IGBT). This Insulated Gate Bipolar Transistor (IGBT) NGTD17T65F2WP features a robust and cost-effective Field Stop II Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The Operating and Storage Temperature Range is between -55 and 175℃.
NGTD17T65F2WP Features
Extremely Efficient Trench with Field Stop Technology
Low VCE(sat) Loss Reduces System Power Dissipation
TJmax = 175°C
Optimized for High-Speed Switching
5 μs Short Circuit Capability
Pb?Free Devices
NGTD17T65F2WP Applications
Industrial Motor Drives
Solar Inverters
UPS Systems
Welding
