IRGB4060DPBF Description
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the user with a comprehensive range of options to ensure your application is covered. High-efficiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IRGB4060DPBF Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of The Parts Tested for 4X Rated Current (ILM)
Positive VCE (on) Temperature Coefficient.
Ultra-Fast Soft Recovery Co-Pak Diode
Tighter Distribution of Parameters
Lead-Free Package
