NGTB40N65IHRWG Description
NGTB40N65IHRWG is a 650v IGBT with MonolithicReverse Conducting Diode. This Insulated Gate Bipolar Transistor (IGBT) NGTB40N65IHRWG features robust and cost-effective Field Stop (FS2) trench construction with a monolithic Diode. It provides a cost-effective solution for applications where diode losses are minimal. The IGBT NGTB40N65IHRWG is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
NGTB40N65IHRWG Features
Extremely Efficient Trench with Field stop Technology
Low Conduction Design for Soft Switching Application
Reduced Power Dissipation in Inducting Heating Application
Reliable and Cost-Effective Single Die Solution
This is a Pb?Free Device
NGTB40N65IHRWG Applications
Inductive Heating
Air Conditioning PFC
Welding
Automotive
Infotainment & cluster
Communications equipment
