IRG4PC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PC30FDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
FAST SWITCHING, ULTRA FAST SOFT RECOVERY
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
31A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
42 ns
Transistor Application
POWER CONTROL
Rise Time
26ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
230 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
31A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.99V
Turn On Time
69 ns
Test Condition
480V, 17A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 17A
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
31A
Turn Off Time-Nom (toff)
620 ns
Gate Charge
51nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
42ns/230ns
Switching Energy
630μJ (on), 1.39mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
24.99mm
Length
15.875mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
In-Stock:3107 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$32.230848
$32.230848
10
$30.406461
$304.06461
100
$28.685339
$2868.5339
500
$27.061641
$13530.8205
1000
$25.529850
$25529.85
IRG4PC30FDPBF Product Details
irg4pc30fdpbf Description
The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
irg4pc30fdpbf Features
? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? Industry standard TO-247AC package ? Lead-Free
