NGTB40N60IHLWG Description
NGTB40N60IHLWG developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB40N60IHLWG is able to provide high efficiency in demanding switching applications.
NGTB40N60IHLWG Features
A rugged co?packaged free wheeling diode
A robust and cost-effective Field Stop (FS) Trench construction
Low on?state voltage
Minimal switching loss
NGTB40N60IHLWG Applications
Inductive heating
Soft switching
