Name: AUIRGDC0250
Brand: Infineon Technologies
SKU: AUIRGDC0250
Price: 11.42000 USD
Availability: InStock

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AUIRGDC0250

Manufacturer part number:AUIRGDC0250

Manufacturer:Infineon Technologies

Description:AUIRGDC0250 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRGDC0250 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	SUPER-220™ (TO-273AA)
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	543W
Input Type	Standard
Power - Max	543W
Collector Emitter Voltage (VCEO)	1.57V
Max Collector Current	141A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	141A
Collector Emitter Saturation Voltage	1.57V
Test Condition	600V, 33A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.57V @ 15V, 33A
Gate Charge	227nC
Current - Collector Pulsed (Icm)	99A
Td (on/off) @ 25°C	-/485ns
Switching Energy	15mJ (off)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

AUIRGDC0250 Product Details

AUIRGDC0250 Description

IGBT AUIRGDC0250 is a kind of composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which has the advantages of the high input impedance of MOSFET and low on-state voltage drop of GTR. It is designed based on planar IGBT technology for low switching losses, low VCE(on), and rugged transient performance in soft switching applications.