NGTB30N135IHRWG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides superiorperformance in demanding switching applications, and offers lowon?state voltage with minimal switching losses. The IGBT is wellsuited for resonant or soft switching applications.
NGTB30N135IHRWG Features
? Extremely Efficient Trench with Fieldstop Technology
? 1350 V Breakdown Voltage
? Optimized for Low Losses in IH Cooker Application
? Reliable and Cost Effective Single Die Solution
? These are Pb?Free Devices
NGTB30N135IHRWG Applications
? Inductive Heating
? Consumer Appliances
? Soft Switching
