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FGH75T65UPD-F085

FGH75T65UPD-F085

FGH75T65UPD-F085

ON Semiconductor

FGH75T65UPD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH75T65UPD-F085 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Rise Time-Max 71ns
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 375W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 150A
Reverse Recovery Time 85 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage2.21V
Turn On Time87 ns
Test Condition 400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn Off Time-Nom (toff) 197 ns
IGBT Type Trench Field Stop
Gate Charge578nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 32ns/166ns
Switching Energy 2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
RoHS StatusROHS3 Compliant
In-Stock:1039 items

Pricing & Ordering

QuantityUnit PriceExt. Price
450$5.27567$2374.0515

FGH75T65UPD-F085 Product Details

FGH75T65UPD-F085 Description

Using Novel Field Stop Trench IGBT Technology, ON Semiconductor's new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS, and Digital Power Generator where low conduction and switching losses are essential.



FGH75T65UPD-F085 Features

Maximum Junction Temperature: TJ = 175°C

Positive Temperature Co?efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A

High Input Impedance

Tightened Parameter Distribution

AEC?Q101Qualified and PPAP Capable

This Device is Pb?Free and is RoHS Compliant



FGH75T65UPD-F085 Applications

Automotive Chargers, Converters, High Voltage Auxiliaries

Solar Inverters, UPS, Digital Power Generator





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