NGTB25N120FL2WAG Description
This Insulated Gate Bipolar Transistor (IGBT) offers low on state voltage and little switching loss, and it has a durable and economical Field Stop II Trench structure. It performs exceptionally well in demanding switching applications. Additionally, compared to the conventional TO247-3L packaging, the novel device is packaged in a TO247-4L container that significantly reduces Eon Losses. The IGBT is a good choice for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is incorporated into the device.
NGTB25N120FL2WAG Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO?247?4L for Minimal Eon Losses
Optimized for High Speed Switching
This is a Pb?Free Devices
NGTB25N120FL2WAG Applications
