Name: FGH40N60SFTU
Brand: ON Semiconductor
SKU: FGH40N60SFTU
Price: 4.33000 USD
Availability: InStock

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FGH40N60SFTU

Manufacturer part number:FGH40N60SFTU

Manufacturer:ON Semiconductor

Description:FGH40N60SFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH40N60SFTU Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Base Part Number	FGH40N60
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	290W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Max Breakdown Voltage	1.2kV
Turn On Time	67 ns
Test Condition	400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 40A
Turn Off Time-Nom (toff)	150 ns
IGBT Type	Field Stop
Gate Charge	120nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	25ns/115ns
Switching Energy	1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	54ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FGH40N60SFTU Product Details

FGH40N60SFTU Description

FGH40N60SFTU is a type of field stop trench IGBT specifically designed based on novel field stop IGBT technology. It belongs to the new series of IGBTs provided by ON Semiconductor. Easy parallel operation can be ensured due to its positive temperature coefficient. It supports high current capability, high input impedance, tighten parameter distribution, and fast switching. These characteristics make FGH40N60SFTU IGBT well suited for applications requiring low conduction and switching losses.