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NGD8205NT4G

NGD8205NT4G

NGD8205NT4G

ON Semiconductor

NGD8205NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGD8205NT4G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 350V
Max Power Dissipation125W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating20A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NGD8205N
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 8000ns
Element ConfigurationSingle
Power Dissipation125W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 390V
Max Collector Current 20A
Collector Emitter Breakdown Voltage390V
Max Breakdown Voltage 390V
Turn On Time6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:7850 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.507200$4.5072
10$4.252075$42.52075
100$4.011392$401.1392
500$3.784332$1892.166
1000$3.570125$3570.125

NGD8205NT4G Product Details

NGD8205NT4G Description


The NGD8205NT4G is an Ignition IGBT with 20 Amp, 350 Volt, N?Channel D2PAK.



NGD8205NT4G Features


  • Ideal for Coil?on?Plug and Driver?on?Coil Applications

  • DPAK Package Offers Smaller Footprint for Increased Board Space

  • Gate?Emitter ESD Protection

  • Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

  • Integrated ESD Diode Protection

  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

  • Low Saturation Voltage

  • High Pulsed Current Capability

  • Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)

  • These are Pb?Free Devices



NGD8205NT4G Applications


  • Ignition Systems


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