STGP19NC60KD Description
These devices STGP19NC60KD are very fast IGBT developed using advanced PowerMesh tuning technology. This process ensures an excellent tradeoff between switch performance and low-open state behavior.
STGP19NC60KD Features
· Low on voltage drop (VCE(sat))
· Low CRES / CIES ratio (no cross-conduction susceptibility)
· Short-circuit withstand time 10 μs
· IGBT co-packaged with ultrafast freewheeling diode
STGP19NC60KD Applications
· High frequency inverters
· Motor drives
