NGB8207NT4G Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
NGB8207NT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy ? 500 mJ
Gate Resistor (RG) = 70
This is a Pb?Free Device
NGB8207NT4G Applications
Ignition Systems
