Name: IPB80P04P407ATMA1
Brand: Infineon Technologies
SKU: IPB80P04P407ATMA1
Price: 1.52000 USD
Availability: InStock

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IPB80P04P407ATMA1

Manufacturer part number:IPB80P04P407ATMA1

Manufacturer:Infineon Technologies

Description:IPB80P04P407ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB80P04P407ATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	Automotive, AEC-Q101, OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	88W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	88W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	7.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6085pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	89nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-40V
Drain-source On Resistance-Max	0.0077Ohm
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IPB80P04P407ATMA1 Product Details

IPB80P04P407ATMA1 Description

The IPB80P04P407ATMA1 is an OptiMOS®-P2 Power-Transistor. The Infineon OptiMOS™ P-Channel power MOSFETs are made to provide improved features and high-caliber performances. Highlights include on-state resistance, Avalanche rates, ultra-low switching loss, and AEC qualification for automotive solutions. Applications include automotive, eMobility, dc-dc, and motor control.