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NDT014L

NDT014L

NDT014L

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 160m Ω @ 3.4A, 10V ±20V 214pF @ 30V 5nC @ 4.5V TO-261-4, TO-261AA

SOT-23

NDT014L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 188mg
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 160mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating2.8A
Number of Elements 1
Power Dissipation-Max 3W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Case Connection DRAIN
Turn On Delay Time6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 214pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.8A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.7A
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Nominal Vgs 1.5 V
Height 1.7mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10178 items

Pricing & Ordering

QuantityUnit PriceExt. Price

NDT014L Product Details

NDT014L Description


This high cell density, DMOS-exclusive N-Channel logic level enhancement mode power field effect transistor is made by ON Semiconductor. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These devices are best suited for low voltage tasks that need quick switching, little in-line power loss, and resistance to transients, such as DC motor control and DC/DC conversion.



NDT014L Features


  • 2.8 A, 60 V. RDS(ON) = 0.2 W @ VGS = 4.5 V

  • High density cell design for extremely low RDS(ON).

  • High power and current handling capability in a widely used surface mount package.



NDT014L Applications


  • DC motor control

  • DC/DC conversion

  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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