Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STF25N80K5

STF25N80K5

STF25N80K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 260m Ω @ 19.5A, 10V ±30V 1600pF @ 100V 40nC @ 10V TO-220-3 Full Pack

SOT-23

STF25N80K5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperMESH5™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF25
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation40W
Case Connection ISOLATED
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19.5A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 19.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.26Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 200 mJ
Height 16.4mm
Length 10.6mm
Width 4.6mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1313 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.05000$11.05
50$9.19320$459.66
100$8.36600$836.6
500$7.12520$3562.6

STF25N80K5 Product Details

STF25N80K5 Description

STF25N80K5 MOSFETs are Power MOSFETs withan innovative proprietary vertical structure. STF25N80K5 N-channel MOSFETs join with a vertical layout to the layout of the company's strip to provide one of the lowest gate charges and on-resistance. STMicroelectronics STF25N80K5 is ideal especially for demanding converters with high efficiency.

STF25N80K5 Features

100% avalanche tested

Worldwide best RDS(on)

Zener-protected

Ultra low gate charge

Worldwide best FOM

STF25N80K5 Applications

Switching applications

server/telecom power

FPD TV power

Industrial power


Get Subscriber

Enter Your Email Address, Get the Latest News