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IRFS540A

IRFS540A

IRFS540A

ON Semiconductor

IRFS540A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

IRFS540A Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 39W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
In-Stock:12391 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.66000$0.66
500$0.6534$326.7
1000$0.6468$646.8
1500$0.6402$960.3
2000$0.6336$1267.2
2500$0.627$1567.5

IRFS540A Product Details

IRFS540A Description


Power MOSFET IRFS540Ais a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.


IRFS540A Features

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175℃Operating Temperature

Lower Leakage Current:10∞A(Max.)@Vs=100V

Lower RDS(ON):0.041 Ω(Typ.)

IRFS540A Applications

power switching circuits




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