NDS9430 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDS9430 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
compliant
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
60m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
528pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.3A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
In-Stock:15000 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.147225
$0.147225
10
$0.138891
$1.38891
100
$0.131029
$13.1029
500
$0.123613
$61.8065
1000
$0.116616
$116.616
NDS9430 Product Details
NDS9430 Description
This P-Channel MOSFET is made using Fairchild Semiconductor's cutting-edge PowerTrench technology, which has a tough gate version. It has been tailored for power management applications that call for gate drive voltage ratings ranging from 4.5V to 20V.
NDS9430 Features
–5.3 A, –30 V RDS(ON) = 60 m? @ VGS = –10 V RDS(ON) =100 m? @ VGS = –4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
NDS9430 Applications
Power management
Load switch
Battery protection
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