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NDS8410A

NDS8410A

NDS8410A

ON Semiconductor

NDS8410A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDS8410A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Power Dissipation2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 10.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 10.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:14338 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.60000$0.6
500$0.594$297
1000$0.588$588
1500$0.582$873
2000$0.576$1152
2500$0.57$1425

NDS8410A Product Details

NDS8410A Description


UltraFET smart devices combine the characteristics of achieving reference efficiency in power conversion applications. Optimized for RDS (on), low ESR, low and Miller gate charging, these devices are ideal for high frequency DC-DC converters


NDS8410A Features

10.8A30VRpsoN)=12mΩ@VGs=10V

RDs(ON)=17mΩ@VGs=4.5V

·Ultra-low gate charge

·High performance trench technology for extremely low RDS(ON)

·High power and current handling capability


NDS8410A Applications

high frequency DC-DC converters


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