Name: IPB530N15N3GATMA1
Brand: Infineon Technologies
SKU: IPB530N15N3GATMA1
Price: 2.17000 USD
Availability: InStock

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IPB530N15N3GATMA1

Manufacturer part number:IPB530N15N3GATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 150V 21A TO263-3

Case Package:SOT-23

Datasheet:IPB530N15N3GATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	68W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	68W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	53m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 35μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	887pF @ 75V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	150V
Drain-source On Resistance-Max	0.053Ohm
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	60 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPB530N15N3GATMA1

The IPB530N15N3GATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 150V 21A TO263-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB530N15N3GATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.