Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FCA35N60

FCA35N60

FCA35N60

ON Semiconductor

MOSFET (Metal Oxide) N-Channel Tube 98m Ω @ 17.5A, 10V ±30V 6640pF @ 25V 181nC @ 10V 600V TO-3P-3, SC-65-3

SOT-23

FCA35N60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SuperFET™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 312.5W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation312.5W
Turn On Delay Time34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 98m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
Rise Time120ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 73 ns
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.098Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 105A
Avalanche Energy Rating (Eas) 1455 mJ
Height 20.1mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:929 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.80000$6.8
10$6.07600$60.76
450$4.49613$2023.2585
900$3.64551$3280.959

FCA35N60 Product Details

FCA35N60 Description

FCA35N60 N-channel MOSFET is based on an original, unique vertical structure. FCA35N60 MOSFET results in a dramatic reduction in the on-resistance. FCA35N60 ON Semiconductor is utilized in the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCA35N60 Features

100% Avalanche Tested

Low effective output capacitance

Typ. RDS(on) = 79m|?

Ultra low gate charge

650V @TJ = 150??C

FCA35N60 Applications

Industrial power applications

Server/telecom power

FPD TV power

ATX power

PFC


Get Subscriber

Enter Your Email Address, Get the Latest News