NDP4060 Description
This high cell density, DMOS N-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. In the avalanche and commutation modes, this very high density technology has been specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. In low voltage applications like automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits where quick switching, little in-line power loss, and resistance to transients are required, these devices are especially well-suited.
NDP4060 Features
15A, 60V. RDS(ON) = 0.10W @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP4060 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
