RQ6E030ATTCR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3.3 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 3A.There is a peak drain current of 12A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 70mOhm.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.
RQ6E030ATTCR Features
the avalanche energy rating (Eas) is 3.3 mJ
based on its rated peak drain current 12A.
single MOSFETs transistor is 70mOhm
RQ6E030ATTCR Applications
There are a lot of Rohm
RQ6E030ATTCR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
