Name: NDF02N60ZH
Brand: ON Semiconductor
SKU: NDF02N60ZH
Price: 0.27000 USD
Availability: InStock

new-10%

NDF02N60ZH

Manufacturer part number:NDF02N60ZH

Manufacturer:ON Semiconductor

Description:NDF02N60ZH datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDF02N60ZH Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	24W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	2.4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	10A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	120 mJ
Height	16.12mm
Length	10.63mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NDF02N60ZH Product Details

NDF02N60ZH Description

NDF02N60ZH is a 600v N-Channel Power MOSFET. Due to the following features, the onsemi NDF02N60ZH can be applied in adapters (Notebook, Printer, Gaming), LCD Panel Power, Lighting Ballasts, and SMPS applications. The operating junction and storage temperature are between -55 and 150℃. The MOSFET NDF02N60ZH is in the TO-220-3 package with 27W power dissipation.