Name: IRF640NPBF
Brand: Infineon Technologies
SKU: IRF640NPBF
Price: 1.32000 USD
Availability: InStock

new-10%

IRF640NPBF

Manufacturer part number:IRF640NPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 150m Ω @ 11A, 10V ±20V 1160pF @ 25V 67nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:IRF640NPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	1999
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	150mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	250
Current Rating	18A
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	67nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	72A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	247 mJ
Recovery Time	241 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	19.8mm
Length	10.668mm
Width	4.826mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF640NPBF Product Details

IRF640NPBF Description

IRF640NPBF MOSFET utilizes proven silicon processes. IRF640NPBF Infineon Technologies provide designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. MOSFET IRF640NPBF is available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.