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NDD05N50ZT4G

NDD05N50ZT4G

NDD05N50ZT4G

ON Semiconductor

ON SEMICONDUCTOR NDD05N50ZT4G MOSFET Transistor, N Channel, 4.7 A, 500 V, 1.25 ohm, 10 V, 4.5 V

SOT-23

NDD05N50ZT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.5Ohm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation83W
Case Connection DRAIN
Turn On Delay Time11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.7A Tc
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.7A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
DS Breakdown Voltage-Min 500V
Nominal Vgs 4.5 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1935 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.864072$0.864072
10$0.815163$8.15163
100$0.769022$76.9022
500$0.725492$362.746
1000$0.684427$684.427

About NDD05N50ZT4G

The NDD05N50ZT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features ON SEMICONDUCTOR NDD05N50ZT4G MOSFET Transistor, N Channel, 4.7 A, 500 V, 1.25 ohm, 10 V, 4.5 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NDD05N50ZT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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