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IRF7807APBF

IRF7807APBF

IRF7807APBF

Infineon Technologies

IRF7807APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7807APBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2004
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Resistance 25MOhm
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating6.6A
Number of Elements 1
Row Spacing6.3 mm
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time17ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 8.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 66A
Dual Supply Voltage 30V
Nominal Vgs 1 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Contains Lead, Lead Free
In-Stock:3468 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.277664$0.277664
10$0.261947$2.61947
100$0.247120$24.712
500$0.233132$116.566
1000$0.219936$219.936

IRF7807APBF Product Details

IRF7807APBF Description


The IRF7807APBF is the HEXFET? Chip-Set for DC-DC Converters employing advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high-efficiency DC-DC Converters that power the latest generation of mobile microprocessors.



IRF7807APBF Features


  • N Channel Application-Specific MOSFETs

  • Ideal for Mobile DC-DC Converters

  • Low Conduction Losses

  • Low Switching Losses

  • Lead-Free



IRF7807APBF Applications


  • New energy vehicles, photovoltaic & wind power generation, smart grid


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