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NDD04N60ZT4G

NDD04N60ZT4G

NDD04N60ZT4G

ON Semiconductor

NDD04N60ZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDD04N60ZT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.8Ohm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 83W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation83W
Case Connection DRAIN
Turn On Delay Time13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 4.1A
Threshold Voltage 3.9V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2.6A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 20A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3207 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.006232$1.006232
10$0.949276$9.49276
100$0.895543$89.5543
500$0.844852$422.426
1000$0.797030$797.03

NDD04N60ZT4G Product Details

NDD04N60ZT4G Description


NDD04N60ZT4G is a type of N-channel power MOSFET provided by ON Semiconductor which is optimized for high efficiency. Based on its unique technology, it is able to provide low on-state resistance, low gate charge, and advanced switching performance. NDD04N60ZT4G is well suited for uninterruptible power supplies, synchronous rectification, and switching applications.



NDD04N60ZT4G Features


  • Low on-state resistance

  • Low gate charge

  • ESD diode-protected gate

  • Advanced switching performance

  • Available in the DPAK package



NDD04N60ZT4G Applications


  • Uninterruptible power supplies

  • Synchronous rectification

  • Switching applications


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