NVMFS5C628NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVMFS5C628NLT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
38 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 12 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Reach Compliance Code
not_compliant
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.7W Ta 110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds
3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain-source On Resistance-Max
0.0033Ohm
Pulsed Drain Current-Max (IDM)
900A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
565 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3111 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NVMFS5C628NLT1G Product Details
NVMFS5C628NLT1G Description
NVMFS5C628NLT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NVMFS5C628NLT1G is -55°C~175°C TJ and its maximum power dissipation is 3.7W Ta. NVMFS5C628NLT1G has 8 pins and it is available in Tape & Reel (TR) packaging way. Avalanche Energy Rating (Eas) of NVMFS5C628NLT1G is 565 mJ and its Pulsed Drain Current-Max (IDM) is 900A.
NVMFS5C628NLT1G Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C628NLWF ? Wettable Flank Option for Enhanced Optical Inspection
AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
NVMFS5C628NLT1G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers